陈佳昕;李梦梅;郭伟玲;
CHEN Jiaxin;LI Mengmei;GUO Weiling;Optoelectronics Technology Lab.Ministry of Education,Beijing University of Technology;

• 1:北京工业大学光电子技术教育部重点实验室

摘要(Abstract)：

Micro LED微显示技术是将传统LED薄膜化、微小化和矩阵化,像素点距离从毫米级降至微米级,并在一个芯片上高度集成的固体自发光显示技术,因其低功耗、响应快、寿命长、发光效率高等特点,被视为一种独特的显示面板技术。本文主要介绍了Micro LED微显示芯片的制备技术,包括芯片结构设计、制备技术优化、光电集成芯片制备技术、巨量转移技术,最后介绍了芯片小型化效应。
Micro LED is a solid spontaneous light display technology with high integration on a single chip.It is traditional LED with thin-filmed,miniaturized and matrixized transformation.Its pixel distance decreases from millimeter level to micron level.Due to the low power consumption,fast response,long life,high light efficiency,it is regarded as a unique display panel technology.This paper mainly introduces the preparation technology of Micro LED display chip,including chip structure design,preparation technology optimization,photoelectric integrated chip preparation technology,mass transfer technology.At last,the effect of chip miniaturization is introduced.

关键词(KeyWords)： 微显示;芯片制备;光电集成;芯片小型化效应
micro-display;chip preparation;photoelectric integration;chip miniaturization effect

Abstract:

Keywords:

基金项目(Foundation): 国家科技重大专项(批准号:2017YFB0403102)

作者(Authors): 陈佳昕;李梦梅;郭伟玲;
CHEN Jiaxin;LI Mengmei;GUO Weiling;Optoelectronics Technology Lab.Ministry of Education,Beijing University of Technology;

参考文献(References)：

• [1]Jiang H X,Lin J Y.Nitride micro-LEDs and beyond-a decade progress review[J].Optics Express,2013,21(S3):A475-A484.
• [2]Haas G.Microdisplays for wearable augmented realityOLED vs LED based systems[J].SID Symp Dig Tech Papers,2019:50(1):713-716.
• [3]Paranjpe Ajit,Montgomery Jay,Lee Soo Min,et al.Micro-LED displays:key manufacturing challenges and solutions[J].Sid Symposium Digest of Technical Papers,2018,49(1):597-600.
• [4]Sun C W,Chao C H,Chen H Y,et al.Development of micro-pixellated GaN LED array micro-display system[J].SID Symposium Digest of Technical Papers,2012,42(1):1042-1045.
• [5]Alexander G Smirnov,Andrew Stepanov,Vitaly P Bondarenko,et al.All silicon passive addressed microLED displays with nanoporous Si/ITO-free nanomesh layers as light emitting pixels[J].SID Symposium Digest of Technical Papers,2019,50:221-224.
• [6]Lumens Co.Ltd.Patent Issued for Micro LED Display Device And Method of Fabricating The Same(USPTO 10,128,308).2018:6042.
• [7]Zhang Lei,Ou Fang,Chong Wing Cheung,et al.Monochromatic active matrix micro-LED micro-displays with>5000 dpi pixel density fabricated using monolithic hybrid integration process[J].SID Symposium Digest of Technical Papers,2018,49(S1):333-336.
• [8]Jin X,Liang J,Li J,et al.Study on the fabrication of orange micro-LED arrays for display[J].Proceedings of SPIE-The International Society for Optical Engineering,2006,6030:210-216.
• [9]Chong W C,Cho W K,Liu Z J,et al.1700 pixels per inch(PPI)passive-matrix micro-LED display powered by ASIC[C]//Compound Semiconductov Integrated Circuit Symposium.IEEE,2014.
• [10]Guilhabert B,Massoubre D,Richardson E,et al.Submicron lithography using InGaN micro-LEDs:mask-free fabrication of LED arrays[J].IEEE Photonics Technology Letters,2012,24(24):2221-2224.
• [11]Xie Enyuan,Stonehouse Mark,Ferreira Ricardo,et al.Design,fabrication and application of GaN-based microLED arrays with individual addressing by n-electrodes[J].IEEE Photonics Journal,2017,9(6):1-1.
• [12]Chen C J,Chen H C,Liao J H,et al.Fabrication and characterization of active-matrix 960×540 blue GaN-based micro-LED display[J].IEEE Journal of Quantum Electronics,2019,55(99):1-6.
• [13]Geum D M,Kim S K,Kang C M,et al.Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation[J].Nanoscale,2019,11(48):23139-23148.
• [14]钱玉明.一种正装结构LED芯片集成封装成交流或直流LED光源的方法:201110403853.6[P].2013-06-19.
• [15]晁鹏飞,许英朝,刘春辉,等.GaN基LED芯片电极结构的优化及制备[J].激光与光电子学进展,2020,57(7):284-290.
• [16]An C C,Wu M H,Huang Y W,et al.Study on flip chip assembly of high density micro-LED array[C]//20116th IMPACT.IEEE,2011.
• [17]Horng R H,Chien H Y,Chen K Y,et al.Development and fabrication of AlGaInP-based flip-chip micro-LEDs[J].IEEE Journal of the Electron Devices Society,2018,6:1-1.
• [18]林杰泓,聂君扬,张永爱,等.高分辨率AM MicroLED显示器设计及其驱动实现[J].半导体光电,2020,41(1):68-72.
• [19]Xu Feng,Gao Chenghao,Fan Yaming,et al.Enhanced performance of vertical-structured InGaN micro-pixelated light-emitting-diode array fabricated using an ion implantation process[J].Optics Letters,2019,44(18):4562-4565.
• [20]Guo W,Meng H,Chen Y,et al.Wafer-level monolithic integration of vertical micro-LEDs on glass[J].IEEE Photonics Technology Letters,2020,32(12):673-676.
• [21]祝宁华,李明,郝跃.光电子器件与集成技术[J].中国科学F辑,2016,46(8):1156-1174.
• [22]Tsuchiyama K,Yamane K,Utsunomiya S,et al.Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO_2/GaN-LED wafer[J].Applied Physics Express,2016,9(10):104101.
• [23]Lu Xing,Liu Chao,Jing Huaxing,et al.Monolithic integration of enhancement-mode vertical driving transistorson a standard ingan/gan light emitting diode structure[J].Applied Physics Letters,2016,109(5):1274.
• [24]Cho S,Lee D,Kwon S.Fluidic self-assembly transfer technology for micro-Led display[C]//2019 20th International Conference on Solid-State Sensors,Actuators and Microsystems&EurosensorsⅩⅩⅩⅢ(TRANSDUCERS&EUROSENSORSⅩⅩⅩⅢ),Berlin,Germany,2019:402-404.
• [25]巨量转移技术.https://www.cnblogs.com/sonny-xby/p/11413675.html.
• [26]Guo W,Tai J,Liu J,et al.Process optimization of passive matrix GaN-based micro-LED arrays for display applications[J].Journal of Electronic Materials,2019,48(8):5195-5201.
• [27]刘建朋.GaN基高压LED的设计和制备[D].北京:北京工业大学,2013.
• [28]Huang Huang-Hsiung,Huang Sheng-Kai,Tsai Yi-Lin,et al.Investigation on reliability of red micro-light emitting diodes with atomic layer deposition passivation layers[J].Opt.Express,2020,28,38184-38195.
• [29]Olivier Francois,Tirano S,et al.Influence of sizereduction on the performances of GaN-based micro-LEDs for display application[J].Journal of Luminescence,2017,191:112-116.
• [30]Gong Z,Jin S,Chen Y,et al.Size-dependent light output,spectral shift,and self-heating of 400 nm InGaN light-emitting diodes[J].Journal of Applied Physics,2010,107(1):1086.
• [31]Ryu H Y,Shim J I.Effect of current spreading on the efficiency droop of InGaN light-emitting diodes[J].Optics Express,2011,19:2886.
• [32]Olivier F,Daami A,Licitra C,et al.Shockley-read-hall and auger non-radiative recombination in GaN based LEDs:A size effect study[J].Applied Physics Letters,2017,111(2):669.
• [33]Konoplev S,Bulashevich K A,Karpov S Y.From largesize to micro-LEDs:scaling trends revealed by modeling[J].Physica Status Solidi,2018,215(10):1700508.1-1700508.6.