薛斌,王军喜,曾一平,李晋闽,闫建昌
XUE Bin,WANG Junxi,ZENG Yiping,LI Jinmin,YAN Jianchang

• 1:中国科学院半导体研究所

摘要(Abstract)：

随着Ⅲ-族氮化物材料与器件技术的不断发展,基于高Al组分氮化物的紫外LED受到广泛关注。本文主要介绍近年来紫外LED在外延、芯片及应用方面的研究进展。紫外LED的量子效率受晶体质量、掺杂效率、光提取等技术难题的制约,还有很大的发展潜力。随着研究的不断深入,紫外LED的性能将进一步提升,并在消毒净化、环境监测、光固化、无创光疗、非视距保密通信等领域得到广泛应用。
With the continuous development of group Ⅲ nitride semiconductor technology, AlGaN-based ultraviolet(UV) LEDs have received great attention. This paper mainly introduces research progress of UV-LEDs in recent years. Currently, performance of the device is restricted due to a list of technical problems, such as epitaxy, doping efficiency and light extraction efficiency. It is believed that with continuous development and research effort, UV LED performance will be greatly improved and its application scenarios will include but not limited in disinfection and purification, environmental monitoring, curing, light therapy, communications etc.

关键词(KeyWords)： 紫外LED;AlGaN;AlN;氮化物发光二极管
ultraviolet LED;AlGaN;AlN;nitride-based LED

Abstract:

Keywords:

基金项目(Foundation): 国家重点研发计划(项目编号:2016YFB0400800)

作者(Author): 薛斌,王军喜,曾一平,李晋闽,闫建昌
XUE Bin,WANG Junxi,ZENG Yiping,LI Jinmin,YAN Jianchang

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